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HYB25D512800CE-6
IC DRAM 512MBIT PAR 66TSOP II
Model:
HYB25D512800CE-6
Manufacturer:
Qimonda
Category:
Integrated Circuits (ICs)
> Memory
> Memory
Description:
IC DRAM 512MBIT PAR 66TSOP II
RoHS:
YES
HYB25D512800CE-6Specifications
Part Status
:
Discontinued at
Mounting Type
:
Surface Mount
Operating Temperature
:
0°C ~ 70°C (TA)
Programmable
:
Not Verified
Memory Type
:
Volatile
Memory Interface
:
Parallel
Write Cycle Time - Word, Page
:
-
Voltage - Supply
:
2.3V ~ 2.7V
Clock Frequency
:
166 MHz
Memory Size
:
512Mbit
Memory Organization
:
64M x 8
Memory Format
:
DRAM
Technology
:
SDRAM - DDR
Package / Case
:
66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package
:
66-TSOP II
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